FQB7P20 MOSFET Transistor

The FQB7P20 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB7P20 transistor as follows.

FQB7P20 Transistor Specification

Transistor Code		FQB7P20
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.69Ohm
Power Dissipation (Maximum)	PD	90W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		19nC

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