FQB6N80 MOSFET Transistor

The FQB6N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB6N80 transistor as follows.

FQB6N80 Transistor Specification

Transistor Code		FQB6N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.95Ohm
Power Dissipation (Maximum)	PD	158W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		31nC

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