FQB5N90 MOSFET Transistor

The FQB5N90 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB5N90 transistor as follows.

FQB5N90 Transistor Specification

Transistor Code		FQB5N90
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.3Ohm
Power Dissipation (Maximum)	PD	158W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		31nC

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