FQB5N50C MOSFET Transistor

The FQB5N50C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB5N50C transistor as follows.

FQB5N50C Transistor Specification

Transistor Code		FQB5N50C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	73W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		18nC

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