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FQB5N15TM MOSFET Transistor

The FQB5N15TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB5N15TM transistor as follows.

Circuit diagram symbol of the FQB5N15TM transistor

FQB5N15TM Transistor Specification

Transistor Code FQB5N15TM
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2-PAK
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 5.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.8Ohm
Power Dissipation (Maximum) PD 54W
Drain-Source Capacitance 40pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 45nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 5.4nC

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