FQB55N10TM MOSFET Transistor

The FQB55N10TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB55N10TM transistor as follows.

FQB55N10TM Transistor Specification

Transistor Code		FQB55N10TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	155W
Drain-Source Capacitance		640pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		75nC

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