FQB50N06TM MOSFET Transistor

The FQB50N06TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB50N06TM transistor as follows.

FQB50N06TM Transistor Specification

Transistor Code		FQB50N06TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		440pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		105nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		31nC

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