FQB50N06LTM MOSFET Transistor

The FQB50N06LTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB50N06LTM transistor as follows.

FQB50N06LTM Transistor Specification

Transistor Code		FQB50N06LTM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	52.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.021Ohm
Power Dissipation (Maximum)	PD	121W
Drain-Source Capacitance		445pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		380nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		24.5nC

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