FQB4N50TM MOSFET Transistor

The FQB4N50TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB4N50TM transistor as follows.

FQB4N50TM Transistor Specification

Transistor Code		FQB4N50TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.7Ohm
Power Dissipation (Maximum)	PD	70W
Drain-Source Capacitance		55pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		10nC

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