FQB4N20TM MOSFET Transistor

The FQB4N20TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB4N20TM transistor as follows.

FQB4N20TM Transistor Specification

Transistor Code		FQB4N20TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		35pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		5nC

UXPython is not the creator or an official representative of the FQB4N20TM MOSFET transistor. You can download the official FQB4N20TM MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

HFW640 MOSFET Transistor FQB30N06LTM MOSFET Transistor FQB4P40TM MOSFET Transistor FQB14N15 MOSFET Transistor HFW11N40 MOSFET Transistor PSMN004-36B MOSFET Transistor FQB20N06LTM MOSFET Transistor FQB12N60CTM MOSFET Transistor HFW6N90 MOSFET Transistor HFW9N50 MOSFET Transistor FCB20N60FTM MOSFET Transistor PSMN012-80BS MOSFET Transistor FQB5N20LTM MOSFET Transistor FQB25N33TM MOSFET Transistor FQB19N20TM MOSFET Transistor FQB9N50CTM MOSFET Transistor FQB5P10TM MOSFET Transistor FQB7N60TM MOSFET Transistor FQB9N25CTM MOSFET Transistor FQB4N90TM MOSFET Transistor