FQB47P06 MOSFET Transistor

The FQB47P06 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB47P06 transistor as follows.

FQB47P06 Transistor Specification

Transistor Code		FQB47P06
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	47A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	160W
Operating Junction Temperature (Maximum)		175°C
Total Gate Charge		84nC

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