FQB34P10TM MOSFET Transistor

The FQB34P10TM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB34P10TM transistor as follows.

FQB34P10TM Transistor Specification

Transistor Code		FQB34P10TM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	33.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	155W
Drain-Source Capacitance		730pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		85nC

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