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FQB34P10 MOSFET Transistor

The FQB34P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB34P10 transistor as follows.

Circuit diagram symbol of the FQB34P10 transistor

FQB34P10 Transistor Specification

Transistor Code FQB34P10
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO263_D2PAK
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 33.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.06Ohm
Power Dissipation (Maximum) PD 155W
Operating Junction Temperature (Maximum) 175°C
Total Gate Charge 85nC

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