FQB33N10TM MOSFET Transistor

The FQB33N10TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB33N10TM transistor as follows.

FQB33N10TM Transistor Specification

Transistor Code		FQB33N10TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.052Ohm
Power Dissipation (Maximum)	PD	127W
Drain-Source Capacitance		320pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		195nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		38nC

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