FQB33N10TM MOSFET Transistor

The FQB33N10TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB33N10TM transistor as follows.

FQB33N10TM Transistor Specification

Transistor Code		FQB33N10TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.052Ohm
Power Dissipation (Maximum)	PD	127W
Drain-Source Capacitance		320pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		195nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		38nC

UXPython is not the creator or an official representative of the FQB33N10TM MOSFET transistor. You can download the official FQB33N10TM MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB17P10TM MOSFET Transistor FQB19N20CTM MOSFET Transistor FQB9N50CFTM MOSFET Transistor FQB7N65CTM MOSFET Transistor FQB9N15TM MOSFET Transistor FCB36N60NTM MOSFET Transistor FQB5N50CTM MOSFET Transistor FQB8N60CFTM MOSFET Transistor FQB16N15TM MOSFET Transistor HFW50N06 MOSFET Transistor FQB4N25TM MOSFET Transistor FQB22P10TM MOSFET Transistor FQB6N50 MOSFET Transistor FQB4P25TM MOSFET Transistor HFW5N65U MOSFET Transistor FQB55N06TM MOSFET Transistor FQB5N50CFTM MOSFET Transistor FQB3P20TM MOSFET Transistor FQB3N90TM MOSFET Transistor HFW12N60S MOSFET Transistor