FQB33N10 MOSFET Transistor

The FQB33N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB33N10 transistor as follows.

FQB33N10 Transistor Specification

Transistor Code		FQB33N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.052Ohm
Power Dissipation (Maximum)	PD	127W
Operating Junction Temperature (Maximum)		175°C
Total Gate Charge		38nC

UXPython is not the creator or an official representative of the FQB33N10 MOSFET transistor. You can download the official FQB33N10 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FDB8896_F085 MOSFET Transistor FDB075N15A MOSFET Transistor FDB8832 MOSFET Transistor FDB3860 MOSFET Transistor FQB22P10TM_F085 MOSFET Transistor FDB031N08 MOSFET Transistor FDB075N15A_F085 MOSFET Transistor FDB8442_F085 MOSFET Transistor FQB44N10 MOSFET Transistor FQB34N20 MOSFET Transistor FQB11P06 MOSFET Transistor HUF75631S3S MOSFET Transistor IRFW630B MOSFET Transistor FDB8860_F085 MOSFET Transistor FDB8442 MOSFET Transistor FDB33N25 MOSFET Transistor FDB060AN08A0 MOSFET Transistor FDB3652 MOSFET Transistor FCB20N60_F085 MOSFET Transistor FQB30N06L MOSFET Transistor