FQB30N06TM MOSFET Transistor

The FQB30N06TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB30N06TM transistor as follows.

FQB30N06TM Transistor Specification

Transistor Code		FQB30N06TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	79W
Drain-Source Capacitance		270pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		85nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		19nC

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