FQB30N06LTM MOSFET Transistor

The FQB30N06LTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB30N06LTM transistor as follows.

FQB30N06LTM Transistor Specification

Transistor Code		FQB30N06LTM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	32A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	79W
Drain-Source Capacitance		270pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		210nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		15nC

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