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FQB2NA90TM MOSFET Transistor

The FQB2NA90TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB2NA90TM transistor as follows.

Circuit diagram symbol of the FQB2NA90TM transistor

FQB2NA90TM Transistor Specification

Transistor Code FQB2NA90TM
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2-PAK
Drain-Source Voltage (Maximum) VDS 900V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 5.8Ohm
Power Dissipation (Maximum) PD 107W
Drain-Source Capacitance 52pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 15nC

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