FQB1P50 MOSFET Transistor

The FQB1P50 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB1P50 transistor as follows.

FQB1P50 Transistor Specification

Transistor Code		FQB1P50
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	10.5Ohm
Power Dissipation (Maximum)	PD	63W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		11nC

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