FQB1N60TM MOSFET Transistor

The FQB1N60TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB1N60TM transistor as follows.

FQB1N60TM Transistor Specification

Transistor Code		FQB1N60TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	11.5Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		20pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		5nC

UXPython is not the creator or an official representative of the FQB1N60TM MOSFET transistor. You can download the official FQB1N60TM MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB5N50TM MOSFET Transistor FQB12N60CTM MOSFET Transistor FQB2P25TM MOSFET Transistor FQB15P12TM MOSFET Transistor FQB17N08TM MOSFET Transistor FCB11N60FTM MOSFET Transistor HFW5N65S MOSFET Transistor FQB30N06TM MOSFET Transistor FQB4N90TM MOSFET Transistor FQB7N60TM MOSFET Transistor FQB7N65CTM MOSFET Transistor FQB5N50CFTM MOSFET Transistor FQB9N50CTM MOSFET Transistor FQB8N60CFTM MOSFET Transistor FCB36N60NTM MOSFET Transistor SSW4N60B MOSFET Transistor SSW2N60B MOSFET Transistor FQB3N30TM MOSFET Transistor PSMN016-100BS MOSFET Transistor FQB2N50TM MOSFET Transistor