FQB19N20 MOSFET Transistor

The FQB19N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB19N20 transistor as follows.

FQB19N20 Transistor Specification

Transistor Code		FQB19N20
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	19.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.15Ohm
Power Dissipation (Maximum)	PD	140W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		31nC

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