FQB17N08LTM MOSFET Transistor

The FQB17N08LTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB17N08LTM transistor as follows.

FQB17N08LTM Transistor Specification

Transistor Code		FQB17N08LTM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		120pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		290nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		8.8nC

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