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FQB15P12TM MOSFET Transistor

The FQB15P12TM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB15P12TM transistor as follows.

Circuit diagram symbol of the FQB15P12TM transistor

FQB15P12TM Transistor Specification

Transistor Code FQB15P12TM
Transistor Type MOSFET
Control Channel Type P-Channel
Package D2-PAK
Drain-Source Voltage (Maximum) VDS 120V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 15A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 310pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 100nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 29nC

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