FQB13N50CTM MOSFET Transistor

The FQB13N50CTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB13N50CTM transistor as follows.

FQB13N50CTM Transistor Specification

Transistor Code		FQB13N50CTM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.48Ohm
Power Dissipation (Maximum)	PD	195W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		43nC

UXPython is not the creator or an official representative of the FQB13N50CTM MOSFET transistor. You can download the official FQB13N50CTM MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB2N30TM MOSFET Transistor FQB19N10TM MOSFET Transistor FDB44N25TM MOSFET Transistor FQB2N50TM MOSFET Transistor FQB5N50CTM MOSFET Transistor FQB16N25TM MOSFET Transistor HFW8N65U MOSFET Transistor FQB3N90TM MOSFET Transistor FQB13N06LTM MOSFET Transistor FQB25N33TM MOSFET Transistor FQB9P25TM MOSFET Transistor FQB19N20TM MOSFET Transistor FQB11N40CTM MOSFET Transistor FQB22P10TM MOSFET Transistor FQB32N12V2TM MOSFET Transistor FQB2N60TM MOSFET Transistor HFW6N90 MOSFET Transistor FQB9N50CFTM MOSFET Transistor FQB13N10LTM MOSFET Transistor FQB19N10LTM MOSFET Transistor