FQB13N06TM MOSFET Transistor

The FQB13N06TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB13N06TM transistor as follows.

FQB13N06TM Transistor Specification

Transistor Code		FQB13N06TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.135Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		5.8nC

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