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FQB12N60CTM MOSFET Transistor

The FQB12N60CTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB12N60CTM transistor as follows.

Circuit diagram symbol of the FQB12N60CTM transistor

FQB12N60CTM Transistor Specification

Transistor Code FQB12N60CTM
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2-PAK
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.65Ohm
Power Dissipation (Maximum) PD 225W
Drain-Source Capacitance 182pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 85nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 48nC

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