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FQB12N50TM_AM002 MOSFET Transistor

The FQB12N50TM_AM002 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB12N50TM_AM002 transistor as follows.

Circuit diagram symbol of the FQB12N50TM_AM002 transistor

FQB12N50TM_AM002 Transistor Specification

Transistor Code FQB12N50TM_AM002
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2-PAK
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 12.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.49Ohm
Power Dissipation (Maximum) PD 179W
Drain-Source Capacitance 220pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 120nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 39nC

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