FQB11P06TM MOSFET Transistor

The FQB11P06TM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB11P06TM transistor as follows.

FQB11P06TM Transistor Specification

Transistor Code		FQB11P06TM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	11.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.175Ohm
Power Dissipation (Maximum)	PD	53W
Drain-Source Capacitance		195pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		13nC

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