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FQB11N40TM MOSFET Transistor

The FQB11N40TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB11N40TM transistor as follows.

Circuit diagram symbol of the FQB11N40TM transistor

FQB11N40TM Transistor Specification

Transistor Code FQB11N40TM
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2-PAK
Drain-Source Voltage (Maximum) VDS 400V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 11.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.48Ohm
Power Dissipation (Maximum) PD 147W
Drain-Source Capacitance 180pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 100nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 27nC

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