FQB11N40CTM MOSFET Transistor

The FQB11N40CTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB11N40CTM transistor as follows.

FQB11N40CTM Transistor Specification

Transistor Code		FQB11N40CTM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.53Ohm
Power Dissipation (Maximum)	PD	135W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		89nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		28nC

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