FQAF8N80 MOSFET Transistor

The FQAF8N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQAF8N80 transistor as follows.

FQAF8N80 Transistor Specification

Transistor Code		FQAF8N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PF
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	107W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		110nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		44nC

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