FQAF47P06 MOSFET Transistor

The FQAF47P06 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQAF47P06 transistor as follows.

FQAF47P06 Transistor Specification

Transistor Code		FQAF47P06
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-3PF
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	38A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		1300pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		450nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		84nC

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