FQAF22P10 MOSFET Transistor

The FQAF22P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQAF22P10 transistor as follows.

FQAF22P10 Transistor Specification

Transistor Code		FQAF22P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-3PF
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	16.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.125Ohm
Power Dissipation (Maximum)	PD	70W
Drain-Source Capacitance		460pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		170nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		40nC

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