FQAF19N60 MOSFET Transistor

The FQAF19N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQAF19N60 transistor as follows.

FQAF19N60 Transistor Specification

Transistor Code		FQAF19N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PF
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.38Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		210nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		70nC

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