FQAF13N80 MOSFET Transistor

The FQAF13N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQAF13N80 transistor as follows.

FQAF13N80 Transistor Specification

Transistor Code		FQAF13N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247_TO3P_TO3PF
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	120W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		68nC

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