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FQA9N90_F109 MOSFET Transistor

The FQA9N90_F109 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA9N90_F109 transistor as follows.

Circuit diagram symbol of the FQA9N90_F109 transistor

FQA9N90_F109 Transistor Specification

Transistor Code FQA9N90_F109
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3PN
Drain-Source Voltage (Maximum) VDS 900V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 8.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.3Ohm
Power Dissipation (Maximum) PD 240W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 55nC

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