FQA85N06 MOSFET Transistor

The FQA85N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA85N06 transistor as follows.

FQA85N06 Transistor Specification

Transistor Code		FQA85N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PN
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	214W
Drain-Source Capacitance		1150pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		230nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		86nC

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