FQA6N80 MOSFET Transistor

The FQA6N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA6N80 transistor as follows.

FQA6N80 Transistor Specification

Transistor Code		FQA6N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.95Ohm
Power Dissipation (Maximum)	PD	185W
Drain-Source Capacitance		125pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		31nC

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