FQA65N06 MOSFET Transistor

The FQA65N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA65N06 transistor as follows.

FQA65N06 Transistor Specification

Transistor Code		FQA65N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	72A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	183W
Drain-Source Capacitance		700pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		160nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		48nC

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