FQA36P15_F109 MOSFET Transistor

The FQA36P15_F109 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA36P15_F109 transistor as follows.

FQA36P15_F109 Transistor Specification

Transistor Code		FQA36P15_F109
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	36A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	294W
Drain-Source Capacitance		710pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		350nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		81nC

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