FQA34N25 MOSFET Transistor

The FQA34N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA34N25 transistor as follows.

FQA34N25 Transistor Specification

Transistor Code		FQA34N25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	245W
Drain-Source Capacitance		465pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		335nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		60nC

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