FQA33N10 MOSFET Transistor

The FQA33N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA33N10 transistor as follows.

FQA33N10 Transistor Specification

Transistor Code		FQA33N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	36A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.052Ohm
Power Dissipation (Maximum)	PD	163W
Drain-Source Capacitance		320pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		195nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		38nC

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