FQA28N50F MOSFET Transistor

The FQA28N50F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA28N50F transistor as follows.

FQA28N50F Transistor Specification

Transistor Code		FQA28N50F
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PN
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	28.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.16Ohm
Power Dissipation (Maximum)	PD	310W
Drain-Source Capacitance		640pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		290nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		110nC

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