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FQA24N50_F109 MOSFET Transistor

The FQA24N50_F109 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA24N50_F109 transistor as follows.

Circuit diagram symbol of the FQA24N50_F109 transistor

FQA24N50_F109 Transistor Specification

Transistor Code FQA24N50_F109
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-3PN
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 24A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 290W
Drain-Source Capacitance 520pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 250nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 90nC

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