FQA22P10 MOSFET Transistor

The FQA22P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA22P10 transistor as follows.

FQA22P10 Transistor Specification

Transistor Code		FQA22P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-3PN
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.125Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		460pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		170nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		40nC

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