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FQA19N20L MOSFET Transistor

The FQA19N20L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA19N20L transistor as follows.

Circuit diagram symbol of the FQA19N20L transistor

FQA19N20L Transistor Specification

Transistor Code FQA19N20L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-3P
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 25A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.14Ohm
Power Dissipation (Maximum) PD 190W
Drain-Source Capacitance 220pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 300nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 27nC

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