FQA17P10 MOSFET Transistor

The FQA17P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA17P10 transistor as follows.

FQA17P10 Transistor Specification

Transistor Code		FQA17P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		310pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		200nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		30nC

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