FQA16N50 MOSFET Transistor

The FQA16N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA16N50 transistor as follows.

FQA16N50 Transistor Specification

Transistor Code		FQA16N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.32Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		325pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		180nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		60nC

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