FQA11N90 MOSFET Transistor

The FQA11N90 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA11N90 transistor as follows.

FQA11N90 Transistor Specification

Transistor Code		FQA11N90
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.96Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		260pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		135nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		72nC

UXPython is not the creator or an official representative of the FQA11N90 MOSFET transistor. You can download the official FQA11N90 MOSFET transistor datasheet to get more infromation about this transistor.

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