FP20W60C3 MOSFET Transistor

The FP20W60C3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FP20W60C3 transistor as follows.

FP20W60C3 Transistor Specification

Transistor Code		FP20W60C3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ITO-3P
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		780pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		3.9V
Total Gate Charge		87nC

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